A New Low-Voltage Low-Noise High-Gain UWB LNA with Multi-Band Tunable Notch Filter for Interference Rejection
To-Po Wang1, Shih-Hua Chiang2, Wei-Qing Xu3

1To-Po Wang, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
2Shih-Hua Chiang, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
3Wei-Qing Xu, Department of Electronic Engineering and Graduate Institute of Computer and Communication Engineering, National Taipei University of Technology, Taipei, Taiwan.
Manuscript received on April 10, 2014. | Revised Manuscript Received on April 12, 2014. | Manuscript published on April 18, 2014. | PP: 25-28 | Volume-1, Issue-5, April 2014.

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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: A new ultra-wideband (UWB) low-noise amplifier (LNA) with multi-band tunable notch filter for interference rejection is presented in this paper. The proposed multi-band tunable notch filter consists of two sections, the first section aims for 2.4-GHz interference rejection, and the second section is designed to block 5.2-GHz interference. Moreover, each notch filter section comprises a high-Q active inductor and varactors for interference rejection and center frequency tuning. Based on the proposed circuit architecture, the UWB LNA has been designed in 0.18-µm RF CMOS process. Simulated results confirm the UWB LNA combining the proposed multi-band tunable notch filter can effectively achieve high gain of 22 dB, low noise figure of 2.7 dB, low LNA supply voltage of 0.7 V, and total dc power consumption including multi-band tunable notch filter of 26.3 mW. In addition, the simulated interference rejections at 0.9 GHz, 1.8 GHz, 2.4 GHz, and 5.2 GHz are 50 dB, 39 dB, 53 dB, and 53 dB. Compared to the previous published 0.18-µm CMOS UWB LNAs with notch filters, the proposed circuit topology in this work exhibits superior performance in terms of gain, noise figure, supply voltage, and interference rejection.
Keywords: Interference rejection, low-noise amplifier (LNA), noise figure, notch filter.